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| May 16, Tuesday |
| 8:30 |
REGISTRATION |
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| 9:00 |
OPENING
REMARKS |
16GO-01 |
Introduction
to the Innovative Interface Bonding Technology, Tadatomo
Suga, The University of Tokyo |
MC:
N. Kawamata |
| 9:20 |
SURFACE ACTIVATED BONDING
(SAB) |
16GO-02 |
Ab-Initio
Local-Energy Analysis of Fe/TiC Interfaces; Masanori
Kohyama, National Institute of Advanced Industrial Science and Technology
(AIST) |
Co-Chairs:
M. Howlader,
H. Takagi |
| 9:40 |
16GO-03 |
Room
Temperature SiC-SiC Direct Wafer Bonding by SAB Methods; Fengwen
Mu, The University of Tokyo |
| 10:00 |
16GO-04 |
Plane-View
Transmission Electron Microscopy of Si/GaAs Interfaces Fabricated by
Surface-Activated Bonding at Room Temperature; Yutaka
Ohno, Tohoku University |
| 10:20-10:40 |
COFFEE
BRAEK |
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| 10:40 |
SURFACE ACTIVATED BONDING
(SAB) |
16GO-05 |
Gas
Cluster Ion Beam Irradiation for Wafer Bonding; Noriaki
Toyoda, University of Hyogo |
Co-Chairs:
M. Takio,
H. Yokoi |
| 11:00 |
16GO-06 |
Enhancement
of Light Transmittance for Wafers Bonded with Thin Al Films Using Atomic
Diffusion Bonding and Subsequent Laser Irradiation; Masatsugu
Ichikawa, Nichia Corporation |
| 11:20 |
16GO-07 |
3-Layered
Au/SiO2 Hybrid Bonding with 6-µm-Pitch Au Electrodes for 3D Structured Image
Sensors; Yuki Honda, NHK Science and Technology Research
Laboratories |
| 11:40 |
16GO-08 |
Distributed
Face Cooling Scheme for Tiny Laser Power Scale-up; Arvydas
Kausas, Institute for Molecular Science |
| 12:00 |
16GO-09 |
Wafer
Bonding Tool Including Dual Plasma Capability for In-situ Sputter Etching
Prior to Aligned Bonding; Vytas Masteika, Applied
Microengineering Ltd. |
| 12:20-13:50 |
LUNCH |
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| 13:50 |
MEMS and
SENSOR INTEGRATION |
16GO-10 |
[Keynote] Wafer-to-Wafer Bonding for Vacuum and
Hermetic Packaging of Smart Sensors; Dorota
Temple, RTI |
Co-Chairs:
W. Paik,
E. Higurashi |
| 14:30 |
16GO-11 |
Al-Al
Wafer-Level Thermocompression Bonding Applied for MEMS; Maaike
Takio, SINTEF |
| 14:50 |
16GO-12 |
Low-Temperature
Solder Bonding and Thin Film Encapsulation for Wafer Level Packaged MEMS
Aiming at Harsh Environment; Chengkuo Lee, National
University of Sinpore |
| 15:10 |
16GO-13 |
Approaches
for Wafer Level Packaging and Heterogeneous System Integration for CMOS and
MEMS Sensors; Ronny Gerbach, X-FAB MEMS Foundry GmbH |
| 15:30 |
16GO-14 |
Bond
Strength of 3D-Stacked Monocrystalline Silicon X-ray Mirrors; David Girou, cosine measurement systems |
| 15:50-16:10 |
COFFEE
BRAEK |
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| 16:10 |
LOW-TEPMERATURE BONDING and APPLICATIONS |
16GO-15 |
[Keynote] Micro- & Nano-Systems Integration- the
Next Frontier; Matir Howlader, Macmaster
University |
Co-Chairs:
D. Temple,
J. Mizuno |
| 16:50 |
16GO-16 |
Fabric-Based
Fine Pitch Interconnect Technology Using Anisotropic Conductive Films (ACFs);
Kyung W. Paik, KAIST |
| 17:10 |
16GO-17 |
Low
Temperature Cu/In Bonding for 3D Integration; Iuliana
Panchenko, Technische Universität
Dresden |
| 17:30 |
16GO-18 |
Study
on Low Temperature Cu Bonding and Temporary
Bond/De -Bond for RDL-First
Fan-Out Panel Level Package; Cheng-Ta Ko, Unimicron
Technology |
| 17:50 |
16GO-19 |
Wafer
Bonding Defects Inspection by IR Microphotoelasticity in Reflection Mode; Alain Bosseboeuf, Université Paris Sud |
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| May 17, Wednesday |
| 8:30 |
BONDING PROCESS INTEGRATION |
17GO-01 |
[Keynote] Low Temperature Direct Bonding Comparison; Frank Fournel, Leti |
Co-Chairs:
M. Groosky,
T. Shimatsu |
| 9:10 |
17GO-02 |
Low-Temperature
Direct Bonding of Silicon to Quartz Glass Wafer via Sequential Wet Chemical
Surface Activation; Chenxi Wang, Harbin Institute of
Technology |
| 9:30 |
17GO-03 |
Novel
Sequential Plasma Activation Method for Direct Glass Bonding; Ran He, The University of Tokyo |
| 9:50 |
17GO-04 |
Room
Temperature Fabrication of Semiconductor Interfaces; Viorel
Dragoi, EV Group |
| 10:10 |
17GO-05 |
Characterization
of Inorganic Dielectric Layers for Low Thermal Budget Wafer-to-Wafer Bonding;
Fumihiro Inoue, IMEC |
| 10:30-10:50 |
COFFEE
BRAEK |
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| 10:50-11:50 |
SHORT PRESENTAION for Poster |
MC:
N. Kawamata |
| 11:50-13:20 |
LUNCH
/ POSTER |
|
| 13:20-14:40 |
STUDENT SESSION
SHORT PRESENTAION for Poster |
MC:
N. Kawamata |
| 14:40-15:30 |
POSTER |
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| 15:30 |
HETERO-INTEGRATION |
17GO-06 |
Various
GaAs to Si Wafer Bonding Approaches for Solar Cells Applications; Vincent Larrey, Leti |
Co-Chairs:
H. Oppermann,
N. Shigekawa |
| 15:50 |
17GO-07 |
Transport
Characteristics of Optically-Excited and Electrically-Injected Minority
Electrons Across p-Si/n-SiC Hetero-Interfaces; Naoteru
Shigekawa, Osaka City University |
| 16:10 |
17GO-08 |
Novel
Integration Method for III–V Semiconductor Devices on Silicon Platform Based
on Direct Bonding and MOVPE Growth; Kazuhiko Shimomura,
Sophia University |
| 16:30 |
17GO-09 |
Tunneling
Devices over Van der Waals Bonded Hetero-Interface; Rusen
Yan, Cornell University |
| 16:50 |
17GO-10 |
N2-Plasma
Activated Bonding for GaInAsP/SOI Hybrid Lasers; Nobuhiko
Nishiyama, Tokyo Institute of Technology |
| 17:10 |
17GO-11 |
Integration
of 200 mm Si-CMOS and III-V Materials through Wafer Bonding; Kwang Hong Lee, Singapore-MIT Alliance for Research and
Technology |
| 17:30 |
RECEPTION
( Bus Transfer to Tokyo Bay Cruise ) |
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| May 18, Thursday |
| 8:30 |
STUDENT SESSION |
18SO-01 |
[Keynote] Advanced Packaging for Wide Band Gap Pwer
Semiconductors; Gudrun Feix, Technische
Universität Berlin |
Co-Chairs:
K. Takeuchi,
K. Jerchel |
| 9:00 |
18SO-02 |
Low
Temperature Cu-Cu Direct Bonding by (111) Oriented Nano-Twin Cu; Jing-Ye Juang, National Chiao Tung University |
| 9:15 |
18SO-03 |
Low-Temperature
Low-Pressure Bonding by Nanocomposites; Jen-Hsiang Liu,
National Chung Hsing University |
| 9:30 |
18SO-04 |
Sn-Bi
Added Ag-Based Transient Liquid Phase Sintering for Low Temperature Bonding; Khairi Faiz Muhammad, Waseda University |
| 9:45 |
18SO-05 |
Optimized
Ultra-Thin Manganin Alloy Passivated Fine-Pitch Damascene Compatible Cu-Cu
Bonding at Sub 200°C for 3D IC Integration; Asisa Kumar
Panigrahi, The Indian Institute of Technology |
| 10:00 |
18SO-06 |
A
Low-Temperature Solid-State Bonding Method Using Cu Microcones Modified with
Ag and Ag Buffer; Menglong Sun, Shanghai Jiao Tong
University |
| 10:15-10:30 |
COFFEE
BREAK |
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| 10:30 |
STUDENT SESSION |
18SO-07 |
[Keynote] Fabrication of Highly Efficient
Four-Junction Solar Cells by Surface-Activated Wafer-Bonding; Felix Predan, Fraunhofer ISE |
Co-Chairs:
K. Jerchel,
K. Takeuchi |
| 11:00 |
18SO-08 |
Room
Temperature Bonding and Debonding of PI Film and Glass Substrate Based on SAB
Method; Kai Takeuchi, The University of Tokyo |
| 11:15 |
18SO-09 |
A
Modified Water Glass Adhesive Bonding Method Using Spot Pressing Bonding
Technique; Yang Xu, Institute of Microelectronics of
Chinese Academy of Sciences |
| 11:30 |
18SO-10 |
Bonding
Mechanism and Electrochemical Impedance of Directly Bonded Liquid Crystal
Polymer and Copper; Arif Ul Alam, Macmaster University |
| 11:45-13:40 |
LUNCH |
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| 13:40 |
PACKAGING
INTEGRATION |
18GO-01 |
[Keynote] Tackling Low Temperature Bonding in Fine
Pitch Applications; Hermann Oppermann, Fraunhofer
IZM |
Co-Chairs:
F. Fournel,
N. Toyoda |
| 14:20 |
18GO-02 |
Low
Temperature Metal-Metal Bonding for Heterogeneous Integration and Performance
Scaling; Mark Goorsky, University of California |
| 14:40 |
18GO-03 |
Effects
of Electromagnetic Radiation Exposure on Direct Cu Bonding; Jenn-Ming Song, National Chung Hsing University |
| 15:00 |
18GO-04 |
Feasibility
Study on Ultrafine-Pitch Cu-Cu Bonding Using Directed Self- Assembly; Murugesan Mariappan, Tohoku University |
| 15:20 |
18GO-05 |
[Keynote] Next Generation Computing Systems with
Heterogeneous Packaging Integration; John U.
Knickerbocker, IBM - T.J. Watson Research Center |
| 16:00-16:30 |
COFFEE
BRAEK |
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| 16:30 |
TUTORIAL |
18GO-06 |
Development
of Thermoelectric Materials with Improved Figure of Merit for Better
Conversion Efficiency; Helmut Baumgart, Old Dominion
University |
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| 17:30 |
AWARDS |
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| 17:50 |
CLOSING REMARKS |
H, Baumgard |
| 18:30 |
STUDENT RECEPTION
(Restaurant Abreuvoir） |
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| SHORT PRESENTAION for Poster |
10:50-12:00
May 17 |
Surface Activated Bonding (SAB) |
17GP-01 |
Surface
Activated Room-Temperature Bonding in Ar Gas Ambience for MEMS Encapsulation;
Hideki Takagi, National Institute of Advanced Industrial
Science and Technology (AIST) |
MC:
N. Kawamata |
| 17GP-02 |
Surface
Activated Wafer Bonding of LiNbO3 and SiO2/Si for LNOI on Si; Ryo Takigawa, Kyushu University |
| Atomic Diffusion Bonding (ADB) |
17GP-03 |
Shear
Strength of Room-Temperature-Bonded Sapphire and Metal Substrates Using Au
Films; Hitoe Kon, Namiki Precision Jewel Co., Ltd. |
| 17GP-04 |
Demonstration
of Laser Oscillation of An Yb-Doped Y2O3 Composite Disk by Use of Atomic
Diffusion Bonding in Room Temperature; Takeshi
Higashiguchi, Utsunomiya University |
| 17GP-05 |
Room
Temperature Bonding of InGaAs Wafers Using Thin Ge Films; Miyuki
Uomoto, FRIS,Tohoku University |
| Electronic Properties of Bonding
Interface |
17GP-06 |
Electrical
Conduction of Si/ITO/Si Junctions Fabricated by Surface Activated Bonding; Jianbo Liang, Osaka City University |
| 17GP-07 |
Impacts
of Bonding-Layer Resistance of Si Bottom Cells on Interface Resistance In
InGaP/GaAs/Si Hybrid Triple-Junction Cells; Naoteru
Shigekawa, Osaka City University |
| 17GP-08 |
Development
of GaAs//Si Current-Balanced Dual Junction
Solar Cell Integrated by Surface-Activated Bonding; Kentaroh Watanabe, The University of Tokyo |
| 17GP-09 |
Interface
Properties of Surface Activated Bonded CNT Bumps and Au Substrate; Masahisa Fujino, The University of Tokyo |
| 3D & Hetero Integration |
17GP-10 |
2D
Material Transfer Using Room Temperature Bonding; Takashi
Matsumae, The University of Tokyo |
| 17GP-11 |
Direct
Transfer of Atomically Smooth Au Film onto Electroplated Patterns for
Room-Temperature Au-Au Bonding in Atmospheric Air; Yuichi
Kurashima, National Institute of Advanced Industrial Science and Technology |
| 17GP-12 |
Stacking
Wafer with Multi-Stepped Silicon Micro-Trenches to Deposit Superconducting
Material for Magnetic Energy Storage; Minoru Sasaki,
Toyota Technological Institute |
| Hydrophilic Bonding |
17GP-13 |
Effect
of Plasma Treatment for Removing Aliphatic Contaminants by Infrared
Spectroscopy on MgO(100) and Quartz Substrates; Yuki
Nagao, Japan Advanced Institute of Science and Technology |
| 17GP-14 |
UV/Ozone-Assisted
Bonding for InAs/GaAs Quantum Dot Lasers on Si; Yuan-Hsuan
Jhang, The University of Tokyo |
| 17GP-15 |
Direct
Bond Optimisation via In Situ Water Vapour Injection and Controlled Anneal
Ramp Rate; Vytas Masteika, Applied Microengineering Ltd. |
| Equipments and Characterization |
17GP-16 |
Temporary
Wafer Carrier for Thin Wafer Handling; Vytas Masteika,
Applied Microengineering Ltd. |
| 17GP-17 |
Automatic
Maszara Testing Jig; Vytas Masteika, Applied
Microengineering Ltd. |
| 17GP-18 |
Fracture
Behavior of the∑13 Grain Boundary of α-Alumina; Eita Tochigi, The
University of Tokyo |
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| STUDENT SESSION: SHORT PRESENTAION for Poster |
13:30-14:40
May 17 |
Surface Activated Bonding (SAB) |
17SP-01 |
Ar+H2
atmospheric-Pressure Plasma Treatment for Au-Au Bonding and Influence of Air
Exposure on Surface Contamination; Michitaka Yamamoto,
The University of Tokyo |
MC:
N. Kawamata |
| 17SP-02 |
Hydrogen
Radical Treatment for Indium Surface Oxide Removal and Re-oxidation
Behaviour; Kohta Furuyama, The University Of Tokyo |
| 17SP-03 |
Optimization
of GCIB Irradiation Conditions for Surface Activated Bonding; Shota Ikeda, University of Hyogo |
| 17SP-05 |
Surface
Activated Bonding of Si Wafers at Liquid Nitrogen Temperature; Yasuhisa Morishita, The University of Tokyo |
| 17SP-06 |
Electrical
Properties of Al-Foil/4H-SiC Schottky Junctions Fabricated by
Surface-Activated Bonding; Sho Morita, Osaka City
University |
| 17SP-07 |
A
Study on Low Temperature SAM Modified POM Direct Bonding Affected by VUV/O3
Irradiation; Weixin Fu, Waseda University |
| Direct Cu Bonding |
17SP-08 |
Cu-Cu
Direct Bonding by Introducing Au Intermediate Layer; Hirokazu
Noma, Waseda University |
| 17SP-09 |
Low
Temperature Direct Cu Bonding Assisted by Residual Stress; Zong-Yu Xie, National Chung Hsing University |
| 17SP-10 |
Hydrogen
Radical Treatment for Surface Oxide Removal of Copper Metal; Seongbin Shin, The University of Tokyo |
| 17SP-11 |
Influence
of Geometric Pattern Design and Surface Roughness on Thermal Performance of
Copper to Copper Bonding; Kathleen Jerchel, The
University of Tokyo |
| III-V Integration |
17SP-12 |
Double
Taper-type Mode Convertor for Direct Bonded
III-V/SOI Hybrid Photonic Devices; Nobuhiko Nishiyama, Tokyo Institute of Technology |
| 17SP-13 |
Bonding
Temperature Dependence of GaInAsP/InP Wafer Grown on Directly Bonded InP/Si
Substrate; Masaki Aikawa, Sophia Unversity |
| 17SP-14 |
Lasing
Characteristics of MOVPE Grown 1.5mm GaInAsP LD Using Directly Bonded InP/Si
Substrate; Natsuki Hayansaka, Sophia University |
| 17SP-15 |
Analysis
of the Influence of Interface Charges on the Electrical Characteristics of
GaAs/GaN Junctions; Shoji Yamajo, Osaka City University |
| Wafer Bonding |
17SP-16 |
Graphene-Mediated
Wafer Bonding to Prepare Monolayer-Cored Double Heterostructures for
High-Performance Nanooptoelectronics; Takenori Naito,
Kyoto University |
| 17SP-17 |
Atomic
Structure of Ti-Doped Alumina Grain Boundaries Fabricated in Air and Reducing
Atmosphere; Saki Ishihara, The University of Tokyo |
| 17SP-18 |
Wafer
Bonding Using Smooth Titanium Thin Films in Air Atmosphere; Hayato Azuma, The University of Tokyo |
| 17SP-19 |
Understanding
the Environmental Influence on Semiconductor Wafer Bonding; Nagito Takehara, Kyoto University |
| Bonding for Nano-Micro System |
17SP-20 |
Fabrication
Processes of Magneto-Optic Waveguides with Si Guiding Layer for Optical
Nonreciprocal Devices; Salinee Choowitsakunlert,
Shibaura Institute of Technology |
| 17SP-21 |
Grating
Design for Packaged Wavelength Selective Infrared Emitter Using Surface
Plasmon Polariton; Shuga Yahagi, Toyota Technical
Institute |
| 17SP-22 |
Fabrication
and Evaluation of Molding and Bonding Tools for Au Micromirror Formation; Ryutaro Nishimura, The University of Tokyo |
| Thermal Reliablility |
17SP-23 |
Study
on Low-cycle Fatigue Testing and Thermal Fatigue Life Prediction of
Electroplated Copper Thin Film for Through Hole Via;
Kazuki Watanabe, Shibaura Institute of Technology |
| 17SP-24 |
Temperature Dependence of Fatigue Crack Propagation Rate of
Pressureless Sintered Ag Nanoparticles; Ryo Kimura,
Shibaura Institute of Technology |
